1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c110 t c = 110 c32a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 64 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c110 , v ge = 15 v 2.1 2.5 v 97538b (7/00) to-268 (ixgt) c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) e c (tab) features international standard packages jedec to-247 and surface mountable to-268 high current handling capability latest generation hdmos tm process mos gate turn-on - drive simplicity applications pfc circuits uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages high power density very fast switching speeds for high frequency applications ixgh 32n60c v ces = 600 v ixgt 32n60c i c25 = 60 a v ce(sat)typ = 2.1 v t fi typ = 55 ns hiperfast tm igbt lightspeed tm series g ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 ; v ce = 10 v, 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 190 pf c res 50 pf q g 110 nc q ge i c = i c110 , v ge = 15 v, v ce = 0.5 v ces 22 nc q gc 40 nc t d(on) 25 ns t ri 20 ns t d(off) 85 ns t fi 55 ns e off 0.32 mj t d(on) 25 ns t ri 25 ns e on 0.30 mj t d(off) 110 170 ns t fi 105 160 ns e off 0.85 1.25 mj r thjc 0.62 k/w r thck (IXGH32N60C) 0.25 k/w inductive load, t j = 25 c i c = i c110 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 150 c i c = i c110 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 4.7 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixgh 32n60c ixgt 32n60c ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.50 0.75 1.00 1.25 1.50 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v t j = 25 c v ge = 15v t j = 25 c i c = 16a i c = 32a i c = 64a t j = 125 c f = 1mhz 5v 5v v ge = 15v t j = 25 c t j = 125 c 7v 9v 5v 7v 9v v ge = 15v 13v c iss c oss c rss 11v 11v ixgh 32n60c ixgt 32n60c fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves
4 - 4 ? 2000 ixys all rights reserved ixgh 32n60c ixgt 32n60c fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. transient thermal resistance pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 25 50 75 100 125 v ge - volts 0 4 8 12 16 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 e (on) - millijoules 0 1 2 3 4 i c - amperes 0 20406080 e (off) - millijoules 0 1 2 3 4 e (on) - millijoules 0.00 0.25 0.50 0.75 1.00 v ce = 300v i c = 16a i c = 32a e (on) e (off) e (off) t j = 125c r g = 4.7 dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 t j = 125c 64 e (on) i c = 64a e (off) t j = 125c e (on) i c = 32a e (on) e (off)
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